![]() Thin covering structure for MEMS devices
专利摘要:
17 ABSTRACT The invention relates to a device comprising a base substrate (700) With a microcomponent (702) attached thereto. Suitably it is provided With routing elements(704) for conducting signals to and from said component (702). It also comprisesspacer members (706) Which also can act as conducting structures for routingsignals vertically. There is a capping structure (708) of a glass material, providedabove the base substrate (700), bonded via said spacer members (706), preferablyby eutectic bonding, Wherein the capping structure (708) comprises vias (710)comprising metal for providing electrical connection through said cappingstructure. The vias can be made by a stamping/pressing method entailing pressingneedles under heating to soften the glass and applying pressure, to apredetermined depth in the glass. HoWever, other methods are possible, e-g- drilling, etching, blasting. (Fig. 7a) 公开号:SE1351530A1 申请号:SE1351530 申请日:2013-12-19 公开日:2015-02-27 发明作者:Thorbjörn Ebefors;Edvard Kälvesten 申请人:Silex Microsystems Ab; IPC主号:
专利说明:
The present invention relates to MEMS technology and relates in particular to the provision of thin roofing structures made of high-resistance materials such as glass, which have substrates (discs) through contacts (vias). Background of the Invention For RF (radio frequency) applications in MEMS structures and devices, the dielectric properties of support structures are of great importance, and it is advisable to eliminate crosstalk between adjacent components or elements on chips or disks where the components in question are arranged. The permeability constant is also an important factor that controls the coupling between substrate and components. The most commonly used material for building MEMS structures and devices is silicon, which is a material that has a comparatively high dielectric constant. However, silicon is often doped to increase the conductivity and thus the conductivity will contribute to negative effects. Stroke capacitances are the most important negative factor in both RF applications and capacitive supplies, and silicon itself causes such problems. Kand technique Applicant's own Swedish patent application no. 1251236-4 relates to a method for manufacturing metal wires in a glass substrate. Summary of the Invention In view of the disadvantages of using silicon in the applications discussed above, the inventors have developed a new structure based on highly resistive materials such as glass, as a base material for the structure and methods for producing the necessary pitches in the new structure. The advantage of the method according to the invention is that the roofing structure can be made very thin. The invention is defined in the appended claims. Specifically, a method of manufacturing a microdevice having a roofing structure is described, comprising the steps of providing a base substrate on which a microelectronic and / or a micromechanical component is applied or integrated; to provide an overcoat substrate of glass material, i.e. a non-crystalline (i.e. amorphous) material which exhibits a glass transition when heated to the liquid state, preferably a material selected from borofloat glass, quartz, metallic alloys, ionic melts, AlOx and polymers; making micro-depressions in the roofing substrate to a predetermined depth; metallizing the depressions in the roofing substrate; providing electrical connections through the roofing substrate; bonding the base substrate and the roofing substrate together so that there is an electrical contact between the component on the base substrate and the metallized depressions in the roofing substrate. The base substrate is suitably bonded to the covering substrate on the side where the micro-depressions Ors, after metallization of the micro-depressions, but before electrical connection through the covering substrate Ors. Alternatively, the base substrate is bonded to the roofing substrate on the side opposite the coating from where the micro-depressions are made after the metallization of the micro-depressions and after the electrical connections through the roofing substrate Ors. The provision of electrical connections preferably includes thinning the covering substrate on the opposite side from where the micro-depressions are made and the metal in the micro-depressions being exposed. The thinning can be stopped before the metal is exposed and one can make openings to expose the metal, and metallize the openings to provide contact and hermetically seal the through connection. The method also includes the manufacture of micro-depressions by stamping or pressing a set of needles projecting from a support plate into the glass plate under heating and pressure. The lamellae are removed together with their support plate immediately after the depressions have been placed in the glass. . Alternatively, the needles are left in the glass material after the depressions and only the support plate is removed so that salt-filled metal is left in the glass. Also described is a device comprising a base substrate having a microcomponent applied to the darpa .; distribution elements for conducting signals to and from the component; spacers that can also act as leading structures for distributing signals vertically; a roofing structure of a glass material, arranged above the base substrate, bonded via the spacer elements, preferably by eutectic bonding, the roofing structure comprising wires comprising metal for providing electrical connection through the roofing structure. The component is preferably a MEM or CMOS component. Additional embodiments are defined in the dependent claims. Brief Description of the Drawings Fig. 1 shows an example of a structure obtainable by the methods described; and Figures 2a-1 illustrate different embodiments of a process sequence; Figs. 3a-c illustrate a method of making micro-recesses; Fig. 3d-f illustrates process steps for finishing a device; Figs. 3g-i illustrate an embodiment of the process shown in Figs. 3a-c; Figs. 4a-b illustrate an embodiment of how to arrange viors; Figs. 5a-c show a further embodiment of the method of manufacturing micro-recesses; Figures 6a-c illustrate an embodiment for making elongate micro-recesses; Fig. 7a is a generalized representation of a device; Fig. 7b is an embodiment in which the roofing substrate comprises a groove to provide space for a component; and Fig. 8 shows alternative embodiments for providing cavities for accommodating components. DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS For the purposes of this application and invention, the term "glass" is to be broadly interpreted, and defined broadly, including in addition to traditional silica glass, a solid solid having a non-crystalline (ie amorphous) structure heated to the liquid state. In this broader sense, glass can be made of quite different types of materials: borofloat glass, quartz, metallic alloys, ionic melts, AlOx and polymers. Furthermore, the term "substrate" when used is taken to include whole wafers, as the term is known in the semiconductor industry, as other structures of various sizes that can be processed as described have. For certain aspects and applications, the so-called borofloat glass suitable, for other applications quartz material is preferred. An important property of the material for RF applications is that it is highly resistive. Fig. 1 shows an embodiment of a device manufactured in accordance with the invention, namely a MEMs device 10 comprising a substrate 12 on which there is arranged a component 14 with a free-hanging or projecting element, or a membrane, i.e. which has a movable element 16 which could be an RF switch, a resonator or a pressure sensing element. Component 14 is enclosed in a cavity which, depending on the application, may have an atmosphere in the form of a vacuum or an inert gas at a selected pressure. The enclosure is formed by a bonding technique such as eutectic bonding, where a bond 19 is formed as a closed Ogla surrounding the component 14 in question, thereby forming a vacuum sealed seal. Additional bonding structures 18 are shown which can form electrical substrate-to-substrate interconnections, and which can also act as support structures and / or spacer structures to the device. The overhanging structure 20 is a glass substrate (disc) (as defined above) having electrical through-connections 22, designated vials, which essentially form grooves or slides extending through the glass substrate. The manufacture of these vias will be described in detail below. The wires have a metal coating 24 on their inner cradles which is connected to contact elements 26 on the upper surface (seen in the figure) of the glass substrate 20. The thickness of the final roofing substrate structure as shown may be as low as 30 nm or 50-100 nm, which has not been achieved so far in the prior art. In general, a device made according to the invention comprises providing a roofing substrate having through connections called viors. Vioma itself can be made from many different salts, and the methods for making vior are not in themselves part of the inventive idea, although some of the methods are considered to be innovative in themselves. Figs. 2a-h thus illustrate a method in its more general aspect and show embodiments in the figures (the figures are shown as cross-sections through the structures). In these figures no cavities are shown to accommodate components for the sake of simplicity, but it should be understood that such cavities are often required, and embodiments showing such cavities are described below. A substrate, typically a sheet, 200 of a glass material (as defined above) is provided to make a roofing structure, Fig. 2a. Hal 202 (in a general sense, need not be circular and would in principle also be elongated grooves) is manufactured in the glass substrate by flake lamp method, Fig. 2b (drilling, blasting, etching, laser treatment, the needle method described below). The cradles in the Mien are metallized 206 by any suitable method such as plating, see Fig. 2c. Plating is not discussed here because it is part of the professional's area of expertise. There are now two different options available for further processing. The first choice is to provide a component substrate 204, Fig. 2d, (silicon with flake MEMS structure; not shown) which is bonded to the glass so that contact is made between the component and the metallized viomas, if required by arranging suitable distribution structures ( not shown). Thereafter, the overcoating substrate 200 is thinned down from the opposite side in relation to where the vioma is made, e.g. by grinding, Fig. 2e. Anyo, within the framework of this water, there are two further choices - either the overlying glass substrate can be thinned more than what is shown in Fig. 2e, so that the metal at the bottom of the vioma is exposed (not shown) or, as shown, the grinding is interrupted on a distance above vioma, Fig. 2e). Then etching (vat or ton) is performed at the vioma positions to provide small apertures 208 so that the metal is exposed, Fig. 2f. These openings are metallized, and are preferably filled with metal 209, Fig. 2g, so as to provide a hermetic seal. Thereafter contacts can be made for signal distribution etc. but this is not part of the invention per se and will not be described further. However, in connection with preferred embodiments, this will be explained in some detail. The process of making apertures 208 is described in some further detail below in connection with a specific embodiment, Fig. 5. As mentioned, thinning can alternatively be done all the way down to the metal in the vioma, which requires that the depth of the vioma is very accurately defined, which can be black to achieve. If we go back to alternatives after the step in Fig. 2c, i.e. the bonding of the component substrate, instead of bonding the component substrate to the overlying substrate after the tail has been metallized, the bonding could be done after the vioma has been completed, as described above, Fig. 2h. In such a case, however, a temporary bar disk 211 would be required for handling purposes. In one embodiment for making the tail using needles (will be described below), these temporary bars will be automatically provided through the process. Otherwise, if e.g. drilling or etching is used to Ora the tail, it would be necessary for an actual temp door carrier 211, as shown in Fig. 2h, to be applied to the roofing substrate. This is possible but not preferable as it adds process steps to the method which is not economical. In a further embodiment, a stamping or pressing procedure using needles is used to provide the covering substrate with filaments, schematically illustrated in Figs. 2i-1. Thus, as shown in Fig. 2i, a needle matrix comprising a set of needles 214 on a substrate 212 is used. Preferably, the needles are made of silicon on a silicon wafer. The method of making such needles is known and will not be discussed. A substrate 200 of a glass material is heated so that it softens and the needles 214 are pressed into the glass material Fig. 2i. Then the glass substrate 200 is ground. that the silicon in the needles is exposed. Also, some of the squeegee tips are ground away to leave a structure as shown in Fig. 2j. Then, a component MEMS substrate 204 is bonded to the covering substrate 200. After bonding the component substrate 204, the silicon material is etched, i.e. the substrate 212 with its parts 214 removed and leaving the structure shown in Fig. 2k, i.e. a MEMS substrate 204 with a roofing substrate 200 having empty via halls 215. In the next step, 21, the viahdlen 215 is metallized by suitable methods, e.g. plating to provide a metal coating 216 within the via handle on the cradles. On this juice, the electrical connection is made through the covering substrate 200. In an alternative embodiment, the needles 214 may be metallized before the matrix is pressed into the glass substrate (not shown). Thus, the metal on the needles can remain in the Mien when the silicon is selectively etched away after the needles have been pressed into the glass substrate. In this embodiment, then, no separate metallization of the via tail is required. However, the end result will be identical to the structure of Fig. 21. An embodiment of the method according to the invention for manufacturing a device is described with reference to the process sequence illustrated in Figs. 3a-f using the squeegee-based method for Ora hal. The component manufactured is an RF switch, but of course the general aspect of the method is not limited to this. In Fig. 3a, a silicon substrate 300 is provided in or on which sharp and substantially conical 70-1001 are formed. In high silicon needles 302 made by DRIE and / or KOH etching, the result is a carrier 300 with needles 302 projecting therefrom. . The needles can be structured in several ways using e.g. KOH etching, DRIE etching or by electroplating Ni in silicon molding structures that define the needles. A glass substrate 304 is provided, having a thickness of 300-500 and has suitable softening properties at elevated temperatures, and the needles are pressed or stamped into this glass substrate at a temperature of about 650 ° C and under a force of 10 kN, see Fig. 3b. Once the needles have been pressed into the glass, the bar can be removed simply by breaking them and the needles 302 remaining in the glass are etched away. Possibly the whole structure is etched, i.e. substrates and needles, removed. If a stamping method is used, the needles are only pressed into the glass and immediately thereafter they are separated from the glass in the same process, leaving reinforced depressions 306 in the glass. Thereby, there is no need to remove any residual silicon in a subsequent process step. If silicon needs to be removed, this is usually done by TMAH / KOH / grinding to provide a structure such as that shown in Fig. 3c. Then, as shown in Fig. 3d, copper (Cu) 308 is plated on the cradles 306 by providing a plating mask using appropriate lithography (not shown) and contact elements 310 are also arranged in the same plating step. There is also provided a Ni / Au / Sn structure for providing a bond and sealing frame and electrical contact. The structure shown in Fig. 3d is an intermediate structure 307 which will eventually form the Overhanging structure of the finished product. Then, see Fig. 3e, an RF switch 312 is built on a component substrate 305, suitably made of silicon, the details of which are not discussed because this component is only exemplary and fifth & prior art. Ni / Au elements for contact and sealing ring Ors also with methods that are optional kanda 10 for the person skilled in the art. The structure in Fig. 3e is referred to as a functional component structure. The intermediate roofing structure of Fig. 3d is turned over and placed aligned by selectable alignment techniques over the functional component structure of Fig. 3e. Using heat and pressure, the two structures are bonded together by eutectic bonding thanks to the bonding materials arranged on the usual structure. The glass substrate 304 is thinned by grinding and / or etching to expose the metal 308 in the recesses 306. By suitable masking and plating, additional contacts 314 are provided on the roofing structure of glass, thereby forming a structure shown in Fig. 3f with a sealed cavity. which has an overhanging structure of glass with metal vias and excellent properties for RF applications. However, it is generally very difficult to control the depth of the vices, and consequently the grinding is to expose the metal, as described above, is not always possible because some vices will be exposed to others. Alternatively, therefore, the glass can be thinned only to such an extent that 10-30 [mu] m of the glass material is left above the vias, see Fig. 4a. Thereafter, contact hall 416 is opened by grinding and / or water-RF etching and the wells thus formed are metallized to form contact elements 418, Fig. 4b. This latter process is not specific to the above embodiment but can be used in any embodiment of the general method described herein. In the process of making the recesses by pressing needles into the glass material, as in Figs. 3a-c, the displaced material will inevitably be forced to take the carriage somewhere, and what is below is that the surface of the substrate will "bend" 316 around the tail which created by a squeegee 320. This is illustrated in Fig. 3g but is not to scale. This effect can cause problems in the subsequent process, such as the metallization and bonding steps that must follow where planarity is a desired property. In preferred embodiments, therefore, the substrate is pretreated to provide depressions 318 in the substrate, see Fig. 4h. These depressions will occupy the bulge as the needles are pressed into the substrate material and thus the planarity of the substrate is at least sufficient, since the bulging material will not extend above the "field" of the substrate, i.e. surrounding substrate surface 319. This is illustrated in Fig. 3i, which is an enlargement of a portion of a substrate and its recess 318, showing a squeegee 320 during the process of pressing it into the substrate 304 within the boundaries of a recess 318 so that the offset material is enclosed in the depression and does not protrude above the "field" surface 219 of the substrate. In another aspect of the method of using needles to provide depressions for subsequent metallization to Ora vior, deep pitches with small pitch (center-to-center-distance) can be made for other purposes. This will now be described with reference to Figs. 5a-c. In particular, the idea of using a matrix of needles on a bar plate which is pressed or stamped into a glass substrate is generally useful for making small slides and very narrow channels in high pitch glass, i.e. 50-200 m, with a holding diameter (or channel width) of 10-100 and a depth of 10-100 pm. Thus, the process sequence of Figs. 5a-c can be followed, but the result shown in Fig. 5c can be taken as the end product in certain applications, i.e. if only the tail as such is evil. Of course, such halls can be treated in many ways to prepare active surfaces 11 on the inner cradles of the tail, possibly in the life science world the surfaces could be functionalized and used as reaction cuvettes. Such functions could be immobilized reagents of various kinds, enzymes, antibodies, markers, etc .. This is schematically illustrated in Figs. 5a-c. A silicon substrate 500 is provided with needles 502, Fig. 4j. The needles are pressed or stamped into a glass substrate 505, Fig. 4k. After removing the silicon needles, either together with the substrate or in a separate step, as discussed above, the glass substrate 505 is provided with depressions 506 in a selected sample for the specifically required and predetermined purpose, Fig. 41. It is also conceivable to provide a substrate with splitting edges, i.e. in the longitudinal direction sharp aces or edges that would cut longitudinal grooves in the glass substrate. This is schematically illustrated in Fig. 6. Thus, a substrate 600 is provided with longitudinally extending cutting edges 602, Fig. 6a. These are pressed or stamped into a glass substrate 604, and when they are fired, they leave channels 606 in the glass substrate, Figs. 6b-c. These channels can be used for biochemical microchannel devices (microfluidic applications), and can of course be functionalized in the same way as described above in connection with the tail. As an alternative to the stamping or pressing methods described above, the tail can also be made using other techniques, especially if the material in the roofing structure does not soften as easily by heating as the traditional glass materials. Lithography, i.e. Masking and etching are standard methods in MEMS and semiconductor technology, and those skilled in the art would be able to design suitable arrays 12 to create hatred in selected materials for roofing substrates, where the tail has the desired dimensions (diameter, depth, pitch) to fit in the present invention. Blasting techniques can also be used by anyone else. Fig. 7a is a schematic representation of a structure incorporating an overlying structure of glass with metal vias. It is a generalization of the structure shown in Fig. 1. Thus, a device may generally comprise a base substrate 700 having some component 702, e.g. MEMS or CMOS component, mounted aril & There are distribution elements 704 for guiding signals to and from said component 702. Internal and outer spacers 706 and 707, respectively, are provided, which may also act as conductive structures for distributing signals vertically. Typically, the outer spacers 707 form an enclosure for sealing purposes, and the inner spacers 706 serve as electrical connections. Above the base substrate 700 there is provided a covering structure 708 of glass, bonded via said spacers 706, 707, preferably by eutectic bonding, as discussed above. The spacer elements provide a finite and selectively defined distance between the base substrate and the covering substrate. Some of the spacer elements may be actual rigid elements defining a predetermined height. Other elements, as indicated above, for example the outer element 707 may be used as a sealing element in which case they surround the component 702 to form a sealed cavity, and need not necessarily be rigid in themselves, but may be dependent on other spacer elements to define hOjden. The covering structure 708 comprises strands 710 comprising metal for providing electrical connection through the covering structure, and contact elements 712 connected to the metal in the strings. Fig. 7b illustrates a further embodiment of the structure shown in Fig. 7a. Hdr, the component 702 has a height such that the spacer elements 706 are not long enough to receive the component between the substrates. Dad & Ors a recess 714 in the covering substrate 708. This recess provides sufficient space for the component 702, e.g. if this comprises a movable element which moves in the vertical direction. This pitcher, i.e. providing a recess in the substrates is useful in all embodiments of the present invention, and the recess may be provided in the base substrate, in the roofing substrate or in ram, as illustrated in Fig. 8. Thus, in Fig. 8a, a base substrate 800 has a component 802 coated in a recess 804 in the base substrate and a roofing substrate 806 is bonded to provide a sealed cavity. In Fig. 8b (the same male reference numeral as in Fig. 8a is used), the recess 804 is arranged in the roofing substrate 806, and in Fig. 8c, depressions 804 are arranged in the ram substrates 800 and 806. Components 802 can be integrated or discrete components, both MEMS and CMOS structures.
权利要求:
Claims (17) [1] 1. A method of making a micro-device With a capping structure, comprising: providing a base substrate on Which there is a micro-electronic and/ or micro-mechanic component attached or integrated; providing a cap substrate of a glass material, i.e. a non-crystalline (i.e.amorphous) material and that exhibits a glass transition When heated towards theliquid state, preferably a material selected from borofloat glasses, quartz, metallic alloys, ionic melts, AlOX, and polymers; making micro-depressions in said cap substrate to a predetermined depth; metallizing the depressions in the cap substrate; providing electrical connection through the cap substrate; bonding together the base substrate and the cap substrate, such thatthere is an electrical contact between the component on the base substrate and the metallized depressions in the cap substrate. [2] 2. The method according to claim 1, Wherein the base substrate is bonded to thecap substrate on the side Where the micro-depressions are made, after themetallization of the micro-depressions, but before the electrical connection through the cap substrate is made. [3] 3. The method according to claim 1, Wherein the base substrate is bonded to thecap substrate on the side opposite from Where the micro-depressions are made,after the metallization of the micro-depressions, and after the electrical connection through the cap substrate is made. [4] 4. The method according to claim 1, Wherein the provision of electrical connectionscomprises thinning the cap substrate on the opposite side form Where the micro- depressions are made and exposing the metal in the micro-depressions. [5] 5. The method according to claim 5, Wherein the thinning is stopped before themetal is exposed and making openings to expose the metal, and metallizing the openings to provide contact and to hermetically seal the through connection. [6] 6. The method according to claim 1, Wherein the micro-depressions are made bystamping or pressing a plurality of needles protruding from a support substrate, into the cap substrate under heating and pressure. [7] 7. The method according to claim 6, Wherein the needles are removed together Withtheir support substrate immediately after the depressions are made so as to leave holes in the cap substrate. [8] 8. The method according to claim 6, Wherein the needles are left in the capsubstrate after the depressions and only the support substrate is removed so as to leave metal filled holes in the cap substrate material. [9] 9. The method according to claim 1, Wherein the micro-depressions are made by etching, blasting or laser drilling. [10] 10. The method according to any of claims 1- 9, Wherein the base substrate, thecap substrate or both are provided With a depression (804) that forms a cavityWhich accommodates the component (802) When the substrates are bonded together. [11] 11. A device comprising a base substrate (200; 300; 400; 500; 600; 700) With amicro component (14; 312; 702; 802) attached thereto; routing elements (704) forconducting signals to and from said component (14; 312; 702; 802); spacermembers (706) Which also can act as conducting structures for routing signalsvertically; a capping structure (708) of a glass material, provided above the basesubstrate (700), bonded via said spacer members (19; 706), preferably by eutecticbonding, Wherein the capping structure (708) comprises vias (22; 306, 308; 710) 16 comprising metal for providing electrical connection through said capping structure. [12] 12. The device according to claim 10, Wherein the component is a MEMS or CMOS component. [13] 13. The device according to claim 10, Wherein the spacers provide a finite and Well defined distance between base substrate and capping. [14] 14. The device according to claim 10, Wherein the component (14) comprises a freehanging or cantilevering element, or a membrane, i.e. having a movable member(16), the component being selected from an RF switch, a resonator or a pressure sensing element. [15] 15. The device according to claim 10, Wherein the component (14) is enclosed in acavity Which depending on the application can have an atmosphere in the form of a vacuum, or an inert gas at a selected pressure. [16] 16. The device according to claim 10, Wherein the enclosure is formed by a bondingtechnique such as eutectic bonding Where a bond (19) is formed as a closed loop encircling the component (14) in question, thereby forming a vacuum tight seal. [17] 17. The device according to claim 10, Wherein the base substrate, the cap substrateor both are provided With a depression (804) that forms a cavity Which accommodates the component (802).
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引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题 WO2002073684A1|2001-03-14|2002-09-19|Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.|Method for structuring a flat substrate consisting of a glass-type material| US20040016995A1|2002-07-25|2004-01-29|Kuo Shun Meen|MEMS control chip integration| US20040259325A1|2003-06-19|2004-12-23|Qing Gan|Wafer level chip scale hermetic package| US7230512B1|2003-08-19|2007-06-12|Triquint, Inc.|Wafer-level surface acoustic wave filter package with temperature-compensating characteristics| KR100594716B1|2004-07-27|2006-06-30|삼성전자주식회사|Cap wafer comprising cavity, semiconductor chip comprising the cap wafer, and method thereof| US7204737B2|2004-09-23|2007-04-17|Temic Automotive Of North America, Inc.|Hermetically sealed microdevice with getter shield| KR100599088B1|2005-06-20|2006-07-12|삼성전자주식회사|Cap for semiconduct device package and method for manufacturing thereof| KR100750741B1|2006-09-15|2007-08-22|삼성전기주식회사|Cap wafer, semicondoctor chip having the same, and fabrication method thereof| KR100831405B1|2006-10-02|2008-05-21| 파이오닉스|Wafer bonding packaging method| JP4919984B2|2007-02-25|2012-04-18|サムスンエレクトロニクスカンパニーリミテッド|Electronic device package and method for forming the same| SE534510C2|2008-11-19|2011-09-13|Silex Microsystems Ab|Functional encapsulation| US8569090B2|2010-12-03|2013-10-29|Babak Taheri|Wafer level structures and methods for fabricating and packaging MEMS| US8987059B2|2012-01-04|2015-03-24|Taiwan Semiconductor Manufacturing Company, Ltd.|MEMS devices and methods of forming same| SE537869C2|2012-11-01|2015-11-03|Silex Microsystems Ab|Substrate-through vior| US9630832B2|2013-12-19|2017-04-25|Taiwan Semiconductor Manufacturing Company, Ltd.|Semiconductor device and method of manufacturing|DE112016003737T5|2015-08-18|2018-05-03|Mitsubishi Electric Corporation|SEMICONDUCTOR DEVICE| DE102016200497A1|2016-01-15|2017-07-20|Robert Bosch Gmbh|Method for producing a micromechanical component|
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申请号 | 申请日 | 专利标题 SE1350972|2013-08-26| SE1350980|2013-08-27| SE1351530A|SE538311C2|2013-08-26|2013-12-19|Thin covering structure for MEMS devices|SE1351530A| SE538311C2|2013-08-26|2013-12-19|Thin covering structure for MEMS devices| 相关专利
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